US Patent 7160617 Boron doped diamond
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Patent Inventor Names
Andrew John Whitehead0
Bärbel Susanne Charlotte Dorn0
Daniel James Twitchen0
Geoffrey Alan Scarsbrook0
Michael Andrew Cooper0
Philip Maurice Martineau0
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Patent abstract
A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.
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US Patent 07160617 Boron doped diamond US Patent 7160617 Boron doped diamond
Infobox
Patent Number
071606170
Patent Number
71606170
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Patent Jurisdiction
Patent Number
071606170
Date of Patent
January 9, 2007
0Patent Application Number
106534190
Date Filed
September 3, 2003
0Official Website
Patent Primary Examiner
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US Patent 07160617 Boron doped diamond
Infobox
Is a
Patent jurisdiction
Patent number
07160617
Date of patent
January 9, 2007
Patent application number
10653419
Date Filed
September 3, 2003
Patent primary examiner
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