Patent attributes
A method of manufacturing a light emitting semiconductor package on a semiconductor wafer 252 which includes a plurality of light emitting devices 254 residing on or in a surface of the semiconductor wafer, the method comprising the steps of: forming at least one first hollow cap 256, each first hollow cap 256 formed to provide: a central portion 260 and first perimeter walls extending from the perimeter edge of the central portion with the free edges of the first perimeter walls adapted to be bonded to the surface of the semiconductor wafer 252 to provide a first cavity; at least one region 258 of the central portion 260 which is substantially transparent or translucent to electromagnetic radiation; aligning the at least one first cap with a corresponding at least one light emitting device using a tool having the same coefficient of thermal expansion as the wafer; bonding the at least one first hollow cap 256 to the semiconductor wafer 252, the central portion overlying at least one of the plurality of light emitting devices 254; and, separating the semiconductor wafer 252 with bonded caps 256 into light emitting semiconductor packages 250.
