Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yung-Cheng Lu0
Tzu-Fang Huang0
Wai-Fan Yau0
Yeming Jim Ma0
David W. Cheung0
Ellie Yieh0
Farhad K. Moghadam0
Ju-Hyung Lee0
...
Date of Patent
January 9, 2007
0Patent Application Number
107653610
Date Filed
January 27, 2004
0Patent Primary Examiner
Patent abstract
A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
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