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US Patent 7161209 Power semiconductor device
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Patent
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Date Filed
October 12, 2004
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Date of Patent
January 9, 2007
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Patent Application Number
10961135
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Patent Citations Received
US Patent 11764257 Systems and methods for junction termination of wide band gap super-junction power devices
US Patent 12119376 Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region
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Patent Inventor Names
Ichiro Omura
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Wataru Saito
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
7161209
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Patent Primary Examiner
Laura M. Schillinger
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