US Patent 7161219 MRAM devices with fine tuned offset
Patent 7161219 was granted and assigned to Micron Technology on January, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Joel A. Drewes0
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Patent abstract
A MRAM cell structure is disclosed as containing an additional ferromagnetic layer and coupling layer between the third ferromagnetic layer and the anti-ferromagnetic layer. The additional ferromagnetic layer affects the demagnetization field to which the free layer is exposed, thereby reducing any bias introduced to the free layer. Further, by adjusting the thickness of the additional ferromagnetic layer, the effects of Neel coupling on the free layer are reduced.
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US Patent 07161219 MRAM devices with fine tuned offset US Patent 7161219 MRAM devices with fine tuned offset
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Patent Number
071612190
Patent Number
71612190
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Current Assignee
Patent Jurisdiction
Patent Number
071612190
Date of Patent
January 9, 2007
0Patent Application Number
110507970
Date Filed
February 7, 2005
0Official Website
Patent Primary Examiner
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US Patent 07161219 MRAM devices with fine tuned offset
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07161219
Date of patent
January 9, 2007
Patent application number
11050797
Date Filed
February 7, 2005
Patent primary examiner
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