Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 16, 2007
0Patent Application Number
107338580
Date Filed
December 10, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Biased plasma etch processes incorporating H2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
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