Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yousuke Inoue0
Akihiro Miyauchi0
Toshio Andou0
Date of Patent
January 23, 2007
0Patent Application Number
103985250
Date Filed
October 16, 2000
0Patent Primary Examiner
Patent abstract
The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semiconductor film containing the germanium on the semiconductor substrate. Further, it also provides a semiconductor device of a novel structure manufactured by the manufacturing method.
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