US Patent 7166922 Continuous metal interconnects

A method of forming an interconnection that includes introducing a barrier material in a via of a dielectric to a circuit device on a substrate in such a manner to deposit the barrier material on the circuit device, introducing a seed material into the via in manner that leaves the barrier material overlying the circuit device substantially exposed, substantially removing the barrier material overlying the circuit device, and introducing a conductive material into the via to form the interconnection.