Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Tzong Yang0
Tzu-Ping Chen0
Date of Patent
January 30, 2007
0Patent Application Number
109055350
Date Filed
January 9, 2005
0Patent Primary Examiner
Patent abstract
A method of manufacturing a split-gate flash memory device is disclosed. On a semiconductor substrate having a plurality of parallel conductive lines, a plurality of doped regions are formed by an ion implantation using the conductive lines as mask. Then, the conductive lines are trimmed for thinning the cover area. Afterward, a composite dielectric layer is formed on the substrate and covers the conductive lines. Finally, a plurality of word lines are formed on the composite dielectric layer.
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