US Patent 7169681 Method of forming dual gate dielectric layer
Patent 7169681 was granted and assigned to Samsung on January, 2007 by the United States Patent and Trademark Office.
Is a
Current Assignee
Date Filed
October 12, 2004
Date of Patent
January 30, 2007
Patent Application Number
10964170
Patent Jurisdiction
Patent Number
Patent Primary Examiner
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