Patent attributes
A method for manufacturing a microlens formed on a semiconductor substrate includes the steps of preparing the semiconductor substrate, forming an insulating film, which has high etching selectivity with the semiconductor substrate, on the semiconductor substrate, forming a first resist layer, which has an opening that exposes a part of the insulating film, on the insulating film, forming a lens forming portion by eliminating a part of the insulting film, using the first resist layer as a mask, forming a second resist layer, which has roughly cylindrical shape, on the lens forming portion surrounded by the insulating film, transforming the second resist layer into a third resist layer that has roughly hemispheric shape by reflowing the second resist later with a heat treatment, and forming a lens on the semiconductor substrate by etching the third resist layer, the semiconductor substrate, and the insulating film simultaneously with anisotropic etching.
