Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akira Inoue0
Minoru Kubo0
Takeshi Takagi0
Yoshihiro Hara0
Date of Patent
January 30, 2007
0Patent Application Number
109836100
Date Filed
November 9, 2004
0Patent Primary Examiner
Patent abstract
A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
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