Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jun Koyama0
Shunpei Yamazaki0
Toshiji Hamatani0
Yasushi Ogata0
Hisashi Ohtani0
Masahiko Hayakawa0
Mitsuaki Osame0
Satoshi Teramoto0
Date of Patent
February 6, 2007
0Patent Application Number
108573560
Date Filed
June 1, 2004
0Patent Citations Received
Patent Primary Examiner
0
Patent abstract
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.
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