Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Heinz Lendenmann0
Christer Hallin0
Date of Patent
February 6, 2007
0Patent Application Number
109292260
Date Filed
August 30, 2004
0Patent Primary Examiner
Patent abstract
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.
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