US Patent 7173299 Photodiode having extended well region
Patent 7173299 was granted and assigned to Cypress Semiconductor Corporation on February, 2007 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor imager structure having a photodiode being provided as a well region formed within a substrate layer and a transistor electrically connected to the photodiode and having a terminal that has a same electrical potential as the photodiode. The well region of the photodiode having an extended portion so that at least a portion of the terminal of the transistor has the same electrical potential as the photodiode is formed within the extended portion of the well region of the photodiode.
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US Patent 07173299 Photodiode having extended well region US Patent 7173299 Photodiode having extended well region
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Patent Number
0717329900
Patent Number
717329900
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Official Website
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071732990
Date of Patent
February 6, 2007
0Patent Application Number
113502960
Date Filed
February 7, 2006
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071732990
Date of Patent
February 6, 2007
0Patent Application Number
113502960
Date Filed
February 7, 2006
0Official Website
Patent Primary Examiner
Edits on 8 Jun, 2022
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US Patent 07173299 Photodiode having extended well region
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07173299
Date of patent
February 6, 2007
Patent application number
11350296
Date Filed
February 7, 2006
Patent primary examiner
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