Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yutaka Hoshino0
Shiro Kamohara0
Shuji Ikeda0
Tomoyuki Miyake0
Isao Yoshida0
Masatoshi Morikawa0
Megumi Kawakami0
Date of Patent
February 13, 2007
Patent Application Number
10921327
Date Filed
August 19, 2004
Patent Primary Examiner
Patent abstract
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.