Patent attributes
The present invention is generally directed to an optical isolator device, and various methods of making same. In one illustrative embodiment, the method comprises obtaining a single SOI substrate, the SOI substrate having an active layer comprised of silicon and a buried insulation layer, forming a doped layer of silicon above the active layer of the SOI substrate, forming first and second isolated regions in at least the doped layer of silicon, forming a photon generating device in the first isolated region, and forming a photon receiving device in the second isolated region. In one illustrative embodiment, the device comprises a substrate comprised of a bulk layer of silicon, a buried insulation layer formed on the bulk silicon layer, and a doped layer of silicon positioned above the buried insulating layer, first and second isolated regions formed in the doped layer of silicon, a photon generating device formed in the first isolated region, and a photon receiving device formed in the second isolated region.
