Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alan Potts0
Date of Patent
February 20, 2007
0Patent Application Number
110533120
Date Filed
February 8, 2005
0Patent Primary Examiner
Patent abstract
A normally off JFET is formed by the implantation of a P base; and a shallower P island atop the P base, forming a narrow lateral conduction channel between the two and a shallow gate implant in the device top surface which forms a second lateral conduction channel with the island. The two channels are each less than 0.5 microns thick and have an impurity concentration such that the channels are depleted at zero gate voltage and are turned on when the gate is forward biased. The gate surrounds a source implant region and a remote drain is provided which is connected to the top surface of the device for a lateral JFET or the bottom of the device for a vertical conduction JFET.
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