US Patent 7186642 Low temperature nitride used as Cu barrier layer
Patent 7186642 was granted and assigned to Micron Technology on March, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Eden Zielinski0
Fred Fishburn0
Zhiping Yin0
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Patent abstract
A method of depositing a non-conductive barrier layer onto a metal surface wherein the resistance of the metal remains substantially unchanged before and after the non-conductive barrier layer deposition. The deposition process provides a low temperature processing environment so as to inhibit the formation of impurities such as silicide in the metal, wherein the silicide can adversely increase the resistance of the underlying metal.
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US Patent 07186642 Low temperature nitride used as Cu barrier layer US Patent 7186642 Low temperature nitride used as Cu barrier layer
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Patent Number
071866420
Patent Number
71866420
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Current Assignee
Patent Jurisdiction
Patent Number
071866420
Date of Patent
March 6, 2007
0Patent Application Number
113288650
Date Filed
January 9, 2006
0Official Website
Patent Primary Examiner
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US Patent 07186642 Low temperature nitride used as Cu barrier layer
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07186642
Date of patent
March 6, 2007
Patent application number
11328865
Date Filed
January 9, 2006
Patent primary examiner
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