US Patent 7186643 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
Patent 7186643 was granted and assigned to Micron Technology on March, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Kie Y Ahn0
Leonard Forbes0
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Patent abstract
A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
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US Patent 07186643 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow US Patent 7186643 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
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Patent Number
071866430
Patent Number
71866430
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Patent Jurisdiction
Patent Number
071866430
Date of Patent
March 6, 2007
0Patent Application Number
108892030
Date Filed
July 12, 2004
0Official Website
Patent Primary Examiner
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US Patent 07186643 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07186643
Date of patent
March 6, 2007
Patent application number
10889203
Date Filed
July 12, 2004
Patent primary examiner
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