US Patent 7187016 Semiconductor device

In a semiconductor device an electric field is controlled in direction or angle relative to a gate, or a channel to adjust a gain coefficient of a transistor. In some embodiments, there are provided a first gate forming a channel region in a rectangle or a parallelogram, and a second gate forming a channel region substantially containing a triangle between the channel region formed by the first gate and each of a source region and a drain region. In some embodiments, there is included a channel region formed by the first gate that is sandwiched by the channel region formed by the second gate, all the channel regions together substantially forming a rectangle or a parallelogram. As such, a semiconductor device allowing a gain coefficient β of an MOS transistor to be modulated by voltage in an analog manner can readily be produced by conventional processing technology and incorporated into any conventional LSIs configured by a CMOS circuit.