Patent 7192849 was granted and assigned to Sensor Electronic Technology on March, 2007 by the United States Patent and Trademark Office.
Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.