Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisashi Ohtani0
Satoshi Murakami0
Misako Nakazawa0
Date of Patent
March 20, 2007
0Patent Application Number
095505980
Date Filed
April 17, 2000
0Patent Primary Examiner
Patent abstract
A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an embedded conductive layer or an oxide conductive layer provided as filling an opening formed in the insulating layer, and the embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.
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