Patent attributes
A method and system for detecting and monitoring a temporal and spatial distribution of a light beam are provided. A semiconductor substrate (120) having a given doping concentration range is partially exposed to an incident laser beam (150). Each part of the semiconductor structure (120) which is exposed to the laser beam is provided with an electrical contact (145), which outputs a voltage which is directly related to the optical power or energy incident on the exposed area. The thermo-voltage is produced by the laser induced thermal gradients. The sensitivity and inter-pixel cross-talk is determined by pixel pitch, doping concentration and window opening (110). Depending of the design, each pixel might be sensitive to the temporal variation of the laser beam.
