US Patent 7193271 Transistor having a protruded drain

Patent 7193271 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on March, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Dong-Ryul Chang0

Soo-Cheol Lee0

Tae-Jung Lee0

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Patent abstract

A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=071932710

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