US Patent 7196882 Magnetic tunnel junction device and its method of fabrication
Patent 7196882 was granted and assigned to Micron Technology on March, 2007 by the United States Patent and Trademark Office.
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Patent abstract
The present invention provides a magnetic tunnel junction memory element comprising two pinned ferromagnetic layers having magnetic orientations pointing in opposite directions and a sense layer arranged between the two pinned ferromagnetic layers and separated from each by a nonmagnetic tunnel barrier layer. The invention also provides methods of fabricating magnetic tunnel junction memory elements as well as magnetoresistive memory devices and processor systems comprising such memory elements.
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US Patent 07196882 Magnetic tunnel junction device and its method of fabrication US Patent 7196882 Magnetic tunnel junction device and its method of fabrication
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Patent Number
0719688200
Patent Number
719688200
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071968820
Date of Patent
March 27, 2007
0Patent Application Number
102005120
Date Filed
July 23, 2002
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071968820
Date of Patent
March 27, 2007
0Patent Application Number
102005120
Date Filed
July 23, 2002
0Official Website
Patent Primary Examiner
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US Patent 07196882 Magnetic tunnel junction device and its method of fabrication
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07196882
Date of patent
March 27, 2007
Patent application number
10200512
Date Filed
July 23, 2002
Patent primary examiner
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