Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 3, 2007
Patent Application Number
10837528
Date Filed
April 30, 2004
Patent Primary Examiner
Patent abstract
The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
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