Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Soo Young Choi0
Beom Soo Park0
Quanyuan Shang0
Date of Patent
April 3, 2007
Patent Application Number
10420417
Date Filed
April 21, 2003
Patent Primary Examiner
Patent abstract
A method of depositing a gate dielectric layer for a thin film transistor is provided. The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
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