Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 3, 2007
Patent Application Number
11098747
Date Filed
April 4, 2005
Patent Primary Examiner
Patent abstract
Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb.
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