US Patent 7199430 Advanced CMOS using super steep retrograde wells
Patent 7199430 was granted and assigned to Texas Instruments on April, 2007 by the United States Patent and Trademark Office.
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Patent abstract
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
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Patent Number
71994300
Date of Patent
April 3, 2007
0Patent Application Number
113629080
Date Filed
February 28, 2006
0Patent Primary Examiner
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US Patent 07199430 Advanced CMOS using super steep retrograde wells US Patent 7199430 Advanced CMOS using super steep retrograde wells
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Patent Number
0719943000
Patent Number
719943000
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071994300
Date of Patent
April 3, 2007
0Patent Application Number
113629080
Date Filed
February 28, 2006
0Official Website
Patent Primary Examiner
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071994300
Date of Patent
April 3, 2007
0Patent Application Number
113629080
Date Filed
February 28, 2006
0Official Website
Patent Primary Examiner
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US Patent 07199430 Advanced CMOS using super steep retrograde wells
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07199430
Date of patent
April 3, 2007
Patent application number
11362908
Date Filed
February 28, 2006
Patent primary examiner
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