Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 3, 2007
Patent Application Number
10972618
Date Filed
October 25, 2004
Patent Primary Examiner
Patent abstract
An improved semiconductor device is disclosed with a NMOS transistor formed on a P-Well in a deep N-well, a PMOS transistor formed on a N-Well in the deep N-well, a first voltage coupled to a source node of the PMOS, and a second voltage higher than the first voltage coupled to the N-well, wherein the second voltage expands a depletion region associated with the PMOS and NMOS transistor for absorbing electrons and holes caused by alien particles.
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