Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 10, 2007
Patent Application Number
11247043
Date Filed
October 11, 2005
Patent Primary Examiner
Patent abstract
A source line is formed by forming a source slot in a bulk insulation layer overlying a substrate to expose a portion of a substrate within the source slot, where the exposed portion of the substrate includes source regions of select gates associated with two or more columns of serially-connected floating-gate transistors formed on the substrate. A layer of epitaxial silicon is grown on the exposed portion so as to partially fill the source slot. A conductive layer is formed on the bulk insulation layer and on the layer of epitaxial silicon so as to substantially fill an unfilled portion of the source slot. The conductive layer is removed from a surface of the bulk insulation layer.
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