US Patent 7202176 Enhanced stripping of low-k films using downstream gas mixing

Patent 7202176 was granted and assigned to Novellus Systems on April, 2007 by the United States Patent and Trademark Office.

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Patent Citations Received

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US Patent 11837441 Depositing a carbon hardmask by high power pulsed low frequency RF

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Patent Inventor Names

David Cheung0

Haruhiro Harry Goto0

Prabhat Kumar Sinha0

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Patent abstract

The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=072021760

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