Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 17, 2007
Patent Application Number
11147312
Date Filed
June 8, 2005
Patent Primary Examiner
Patent abstract
In a method of manufacturing a semiconductor device, a first trench is formed in a first region of a substrate and a second trench is formed in a second region of the substrate different from the first region. A depth of the first trench is less than that of the second trench. An insulation layer is formed in the second trench, so that semiconductor structures in the first trench are electrically isolated, and a conductive layer fills the first trench and extends above the first trench.
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