Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Sung Shih0
Date of Patent
April 17, 2007
0Patent Application Number
111899030
Date Filed
July 26, 2005
0Patent Primary Examiner
Patent abstract
A thin film transistor with a microlens. A metal gate is formed on a substrate. A gate dielectric covers the metal gate. A semiconductor layer is formed on the gate dielectric. Source/drain metal layers respectively overlap ends of the top surface of the semiconductor layer such that the semiconductor layer between the source/drain metal layers is exposed. The microlens is formed on the exposed top surface of the semiconductor layer.
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