US Patent 7205599 Devices having improved capacitance
Patent 7205599 was granted and assigned to Micron Technology on April, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Karl M. Robinson0
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Patent abstract
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.
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US Patent 07205599 Devices having improved capacitance US Patent 7205599 Devices having improved capacitance
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Patent Number
072055990
Patent Number
72055990
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
072055990
Date of Patent
April 17, 2007
0Patent Application Number
094702650
Date Filed
December 22, 1999
0Official Website
Patent Primary Examiner
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US Patent 07205599 Devices having improved capacitance
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07205599
Date of patent
April 17, 2007
Patent application number
09470265
Date Filed
December 22, 1999
Patent primary examiner
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