Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsuro Asano0
Toshikazu Hirai0
Date of Patent
April 17, 2007
0Patent Application Number
101058020
Date Filed
March 26, 2002
0Patent Primary Examiner
Patent abstract
A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. The gate width of each FET is about 400 μm, and the maximum power required for the device operation is maintained by a lager conductivity of the channel layer of one FET and by a lower conductivity of the channel layer of another FET. The device operates at frequencies of 2.4 GHz or higher without use of shunt FET.
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