Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 17, 2007
Patent Application Number
10995126
Date Filed
November 24, 2004
Patent Primary Examiner
Patent abstract
A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.
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