Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Voon-Yew Thean0
Bich-Yen Nguyen0
Mariam G. Sadaka0
Ted R. White0
Alexander L. Barr0
Date of Patent
April 24, 2007
Patent Application Number
10919922
Date Filed
August 17, 2004
Patent Primary Examiner
Patent abstract
A process for forming a strained semiconductor layer. The process includes implanting ions into a semiconductor layer prior to performing a condensation process on the layer. The ions assist in diffusion of atoms (e.g. germanium) in the semiconductor layer and to increase the relaxation of the semiconductor layer. After the condensation process, the layer can be used as a template layer for forming a strained semiconductor layer.
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