Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 24, 2007
Patent Application Number
10917886
Date Filed
August 12, 2004
Patent Primary Examiner
Patent abstract
A technique for producing a thin gate oxide having a relatively high dielectric constant. Embodiments relate to the structure and development of a gate oxide having a thickness of less than 1 nm, having a dielectric constant greater than twenty, and being substantially free of undesired electrical characteristics caused by exposure of the gate oxide to high complementary metal-oxide-semiconductor processing temperatures.
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