Patent attributes
A semiconductor storage device includes a semiconductor substrate; an sulating layer formed on the semiconductor substrate; a first semiconductor layer formed on the insulating layer and insulated from the semiconductor substrate; memory cells each having a source region of a first conduction type and a drain region of the first conduction type both formed in the first semiconductor layer, and having a body of a second conduction type formed in the first semiconductor layer between the source region and the drain region, the memory cells being capable of storing data by accumulating or releasing electric charge in or from their respective body regions; memory cell lines each including a plurality of the memory cells aligned in the channel lengthwise direction; and a memory cell array including a plurality of the memory cell lines aligned in a channel widthwise direction of the memory cells.
