Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ga Won Lee0
Date of Patent
May 1, 2007
0Patent Application Number
108111520
Date Filed
March 29, 2004
0Patent Primary Examiner
Patent abstract
The present invention relates to a method of forming an interlayer dielectric film in a semiconductor device. More particularly, the present invention selectively forms an insulating film spacer only at a region where a plug is formed between metal lines and removes the insulating film spacer at a region where the plug is not formed to lower the aspect ratio between the metal lines, in a process of burying an insulating material between the metal lines to electrically insulate them. Therefore, the present invention can easily bury the insulating material even between the metal lines having a narrow gap without voids.
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