US Patent 7211493 Variable capacitor structure and method of manufacture
Patent 7211493 was granted and assigned to United Microelectronics Corporation on May, 2007 by the United States Patent and Trademark Office.
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A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped well has a cavity. The first type ion-doped buried layer is in the substrate underneath the first type ion-doped well. The first type ion-doped buried layer and the first type ion-doped well are connected. The second type ion-doped region is at the bottom of the cavity of the first type ion-doped well. The conductive layer is above and in connection with the first type ion-doped buried layer.
US Patent 07211493 Variable capacitor structure and method of manufacture US Patent 7211493 Variable capacitor structure and method of manufacture
US Patent 07211493 Variable capacitor structure and method of manufacture
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