Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bing-Chang Wu0
Date of Patent
May 1, 2007
0Patent Application Number
100723390
Date Filed
February 7, 2002
0Patent Primary Examiner
Patent abstract
A method of fabricating high resistivity thin film resistors. An isolation region is formed on a substrate to isolate the active regions. A polysilicon layer is formed above the substrate. A diffusion barrier layer is formed above the polysilicon layer. Lightly doped ions are implanted in the polysilicon layer. The substrate is annealed at a high temperature. The diffusion barrier layer and the polysilicon layer are patterned to form a high-resistive thin film resistor. Spacers are formed on the sidewalls of the high-resistive thin film resistor.
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