Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Michinori Wachi0
Kenya Itani0
Date of Patent
May 8, 2007
Patent Application Number
10964819
Date Filed
October 15, 2004
Patent Primary Examiner
Patent abstract
A Si-doped gallium arsenide single crystal substrate has a carrier concentration of 0.1×1018 to 5.0×1018/cm3. The substrate is made by Vertical Bridgeman (VB) method or Vertical Gradient Freeze (VGF) method, and a minimum value and a maximum value of the carrier concentration in substrate plane are within a dispersion of 10% or less of an average carrier concentration in substrate plane.
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