US Patent 7217634 Methods of forming integrated circuitry
Patent 7217634 was granted and assigned to Micron Technology on May, 2007 by the United States Patent and Trademark Office.
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The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within semiconductive silicon-comprising material. The isolation trenches comprise sidewalls comprising exposed semiconductive silicon-comprising material. An epitaxial silicon-comprising layer is grown from the exposed semiconductive silicon-comprising material sidewalls within the isolation trenches. Electrically insulative trench isolation material is formed within the isolation trenches over the epitaxially-grown silicon-comprising layer. Other aspects and implementations are contemplated.
US Patent 07217634 Methods of forming integrated circuitry US Patent 7217634 Methods of forming integrated circuitry
US Patent 07217634 Methods of forming integrated circuitry
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