Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
John M. Larson0
John P. Snyder0
Date of Patent
May 22, 2007
0Patent Application Number
114784780
Date Filed
June 28, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A MOSFET device and method of fabricating is provided. The MOSFET device and method of fabricating utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the MOSFET device and method unconditionally eliminates the parasitic bipolar gain associated with MOSFET fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics.
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