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US Patent 7221036 BJT with ESD self protection

Patent 7221036 was granted and assigned to National Semiconductor on May, 2007 by the United States Patent and Trademark Office.

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Patent abstract

A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.

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