Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 29, 2007
Patent Application Number
10813085
Date Filed
March 31, 2004
Patent Primary Examiner
Patent abstract
In formation-by-growth of an AlGaN layer 3 as having a double-layered structure, a non-doped AlGaN layer (i-AlGaN layer) having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 3 nm on an i-GaN layer, and further thereon, an AlGaN layer (n-AlGaN layer) doped with Si in a concentration of approximately 2×1018/cm3 and having an Al compositional ratio of approximately 15% is formed to a thickness of approximately 17 nm.
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