US Patent 7226708 Multi-layer, attenuated phase-shifting mask
Patent 7226708 was granted and assigned to Micron Technology on June, 2007 by the United States Patent and Trademark Office.
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The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.
US Patent 07226708 Multi-layer, attenuated phase-shifting mask US Patent 7226708 Multi-layer, attenuated phase-shifting mask
US Patent 07226708 Multi-layer, attenuated phase-shifting mask
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